职位描述
该职位还未进行加V认证,请仔细了解后再进行投递!
Job Description:
Intel Dalian Memory Technology and Manufacturing (DMTM) is high-volume
manufacturing memory fab in Intel China working on leading edge 3D NAND
product. Intel and SK Hynix have an agreement for SK Hynix to acquire Intel's
NAND memory and storage business. and Intel will continue to manufacture NAND
wafers at the Dalian memory manufacturing until the final closing expected to
occur in March 2025. Intel DMTM will continue to build on the success of our
NAND technology at a greater scale, play a larger role in supporting our
customers.
We are seeking experienced product development technologists to lead the
development and optimization of next generation NAND Flash memory products.
Successful candidates will play a pivotal role in driving the product lifecycle
from product design, technology development phase to mass production, ensuring
that our product meets the highest standards of quality, performance, and
reliability. This is an excellent opportunity for experienced engineers to
develop and enable industry leading QLC NAND technology critical for building
datacenter storage solutions in the AI era.
Major responsibilities include:
* Lead the development of NAND Flash memory products, including defining
specifications, developing solutions to meet specifications, and designing
validation/testing methods to ensure requirements are met.
* Design and execute detailed characterization methodologies for NAND memory
arrays to assess device performance, reliability, and variability.
* Lead the optimization of NAND trims, waveforms, and algorithms to improve
product performance, reliability, and power consumption.
* Analyze system requirements to determine the impact on NAND component
operating conditions and testing strategies.
* Work closely with SSD engineering teams to ensure seamless integration of
NAND media into the SSD through component/system co-optimization.
* Drive resolution of any NAND related issues encountered during SSD
qualification.
* Collaborate with cross-functional teams, including design, process,
reliability, system teams to ensure product meets requirements to achieve
qualification and enable mass production ramp.
Qualifications:
Minimum Qualifications:
* Master or PHD Degree in semiconductor circuit design, Electrical/Electronic
Engineering, Computer Engineering, or related fields.
* 7 years of experience in memory product development.
* Experienced in memory characterization methodologies and trim/waveform
optimization.
* Knowledge of NAND Flash memory technology, including architecture and
operation.
* Knowledge of SSD operation and NAND/SSD co-optimization methodologies.
* Excellent communication and teamwork abilities, with experience working in
a multi-disciplinary engineering environment.
* Proven track record of technical leadership and ability to work
independently.
Preferred Qualifications:
* 10 years of experience in memory product development, with majority of it
in NAND Flash.
* Experienced in leading development of multiple products from concept to
mass production.
* Experienced in SSD operation and resolving complicated NAND/SSD integration
challenges
This position is associated with the sale of Intel's NAND memory and storage
business to SK. This transaction will enhance the resources and potential of
the business' storage, and you will be joining a world-class team that will
transition to lead the SSD business at SK group. We will keep you informed
updates and steps related to this transaction.
Intel Dalian Memory Technology and Manufacturing (DMTM) is high-volume
manufacturing memory fab in Intel China working on leading edge 3D NAND
product. Intel and SK Hynix have an agreement for SK Hynix to acquire Intel's
NAND memory and storage business. and Intel will continue to manufacture NAND
wafers at the Dalian memory manufacturing until the final closing expected to
occur in March 2025. Intel DMTM will continue to build on the success of our
NAND technology at a greater scale, play a larger role in supporting our
customers.
We are seeking experienced product development technologists to lead the
development and optimization of next generation NAND Flash memory products.
Successful candidates will play a pivotal role in driving the product lifecycle
from product design, technology development phase to mass production, ensuring
that our product meets the highest standards of quality, performance, and
reliability. This is an excellent opportunity for experienced engineers to
develop and enable industry leading QLC NAND technology critical for building
datacenter storage solutions in the AI era.
Major responsibilities include:
* Lead the development of NAND Flash memory products, including defining
specifications, developing solutions to meet specifications, and designing
validation/testing methods to ensure requirements are met.
* Design and execute detailed characterization methodologies for NAND memory
arrays to assess device performance, reliability, and variability.
* Lead the optimization of NAND trims, waveforms, and algorithms to improve
product performance, reliability, and power consumption.
* Analyze system requirements to determine the impact on NAND component
operating conditions and testing strategies.
* Work closely with SSD engineering teams to ensure seamless integration of
NAND media into the SSD through component/system co-optimization.
* Drive resolution of any NAND related issues encountered during SSD
qualification.
* Collaborate with cross-functional teams, including design, process,
reliability, system teams to ensure product meets requirements to achieve
qualification and enable mass production ramp.
Qualifications:
Minimum Qualifications:
* Master or PHD Degree in semiconductor circuit design, Electrical/Electronic
Engineering, Computer Engineering, or related fields.
* 7 years of experience in memory product development.
* Experienced in memory characterization methodologies and trim/waveform
optimization.
* Knowledge of NAND Flash memory technology, including architecture and
operation.
* Knowledge of SSD operation and NAND/SSD co-optimization methodologies.
* Excellent communication and teamwork abilities, with experience working in
a multi-disciplinary engineering environment.
* Proven track record of technical leadership and ability to work
independently.
Preferred Qualifications:
* 10 years of experience in memory product development, with majority of it
in NAND Flash.
* Experienced in leading development of multiple products from concept to
mass production.
* Experienced in SSD operation and resolving complicated NAND/SSD integration
challenges
This position is associated with the sale of Intel's NAND memory and storage
business to SK. This transaction will enhance the resources and potential of
the business' storage, and you will be joining a world-class team that will
transition to lead the SSD business at SK group. We will keep you informed
updates and steps related to this transaction.
工作地点
地址:上海闵行区闵行区紫星路880号
查看地
求职提示:用人单位发布虚假招聘信息,或以任何名义向求职者收取财物(如体检费、置装费、押金、服装费、培训费、身份证、毕业证等),均涉嫌违法,请求职者务必提高警惕。
职位发布者
Auro..HR
英特尔(中国)研究中心有限公司
- IT服务·系统集成
- 200-499人
- 外商独资·外企办事处
- 海淀区科学院南路2号融科资讯中心A座8层